SI-TECH, INC. offers the following products:
SILICON WAFERS
Si-TECH, INC. stocks an inventory of silicon wafers in a wide variety of specifications to meet your requirements for test, monitor, and prime material. We have a large selection of diameters, type/dopants, orientations, resistivities, thicknesses and grades in stock for immediate delivery. Visit our inventory page to see a partial listing of
items we have in stock.
MATERIAL CHARACTERISTICS
Diameters: |
2"/50.8mm, 3"/76.2mm, 4"/100mm,
5"/125mm, 6"/150mm, 8"/200mm, 12"/300mm |
Orientation: |
<1-0-0>, <1-1-1>, <1-1-0>,
<5-1-1>, and others |
Resistivities: |
From less than 0.004 ohm-cm to greater than 5000
ohm-cm for P-type and N-type CZ, MCZ, and FZ substrates. |
TOP QUALITY TYPE III - V COMPOUNDS
Si-TECH, INC. offers type III - V compound wafers and ingots as well. These materials include Silicon Carbide, Gallium Arsinide, Germanium, and Indium Phoshide. All this material will be grown to customer specifications and subject to minimum order sizes.
TYPE III - V MATERIAL CHARACTERISTICS
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Diameter |
Growth
Method |
Orientation |
DPNT |
Resistivity |
Gallium Arsenide |
50.8mm, 76.2mm, 100mm, 150mm |
CZ |
<1-0-0>,<1-1-1> |
Fe, Sn, Si, Zn |
.006 - .085
.09-.2 ohm-cm |
Indium Phosphide |
50.8mm, 76.2mm |
CZ |
<1-0-0>,<1-1-1> |
S, Sn, Zn |
.35 - .95
.1.0 - 2.8 ohm-cm |
Germanium |
25mm, 63.5mm, 100mm |
CZ |
<1-0-0>,<1-1-1> |
Si, Zn |
.002 - .032
.004-.062 ohm-cm |
Gallium Phosphide |
50.8mm, 76.2mm |
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Sapphire |
50.8mm, 76.2mm, 100mm |
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SILICON CARBIDESi-TECH also supplies Silicon Carbide.50.8mm and 100mm diameter wafers are available. Please look below for the specifications we typically have to offer.
Property | 4H-SiC, Single Crystal | 6H-SiC, Single Crystal |
Lattice Parameters |
a=3.076 Å
c=10.053 Å |
a=3.073 Å
c=15.117 Å |
Stacking Sequence |
ABAC |
ABCACB |
Lattice Sites |
1 hexagonal (h)
1 cubic (k) |
1 hexagonal (h)
2 cubic (k1, k2) |
Mohs Hardness |
9.2 – 9.3 |
9.2 – 9.3 |
Density |
3.21 · 103 kg/m3 |
3.21 · 103 kg/m3 |
Therm. Expansion Coefficient |
4 – 5 · 10-6 /K |
4 – 5 · 10-6 /K |
Refraction Index (at λ=467nm) |
no=2.719
ne=2.777 |
no=2.707
ne=2.755 |
Dielectric Constant |
9.72 |
9.72 |
Thermal Conductivity |
370 W/mK |
490 W/mK |
Bandgap |
3.23 eV |
3.00 eV |
Break-Down Electrical Field |
3 – 5 · 108 V/m |
3 – 5 · 108 V/m |
Saturation Drift Velocity |
1.9 · 105 m/s |
1.5 · 105 m/s |
WAFER CASSETTESSi-TECH now offers wafer cassettes. We have single wafer carriers ranging from 100mm up to and including 300mm available. Also, we carry 25 piece carriers from 50.8mm up to and including 300mm Si-TECH can provide you with the carrier you require to transport your wafers. Si-TECH can also reclaim certain cassettes. See: Wafer Cassette Product Information
METAL GRANULES, PELLETS AND SLUGS.
In addition to wafers, Si-TECH can provide you with various metals in slug, pellet and granule form. These metals include but are not limited to Aluminum, Titanium, Zinc, Copper, Indium. Please contact us with your requirements.
SPIN-ON GLASS.
Si-TECH can provide Spin-On Materials. The Spin-On Materials that Si-TECH can apply to a substrate
are Lithium, Boron, Sodium, Aluminum, Phosphorous, Titanium, Copper, Zinc, Gallium, Yttrium,
Palladium, Indium, Tin, Antimony, Barium, Neodymium, Tantalum, Gold and Platinum. Please contact
us for more information.
SPUTTERING TARGETS.
Si-TECH offers sputtering targets such as Chromium, Germanium, Gold, Iron, Nickel, Palladium,
Platinum, Rhenium, Silicon, Silver, Aluminum-Copper, Copper-Zinc, Nickel-Aluminum, Nickel-
Chromium, Silicon-Aluminum, Silicon Dioxide, Titanium-Aluminum, Titanium Dioxide, and Zinc-Oxide.
Please call, fax or e-mail for price and delivery information.
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