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SI-TECH, INC. offers the following products:

SILICON WAFERS

Si-TECH, INC. stocks an inventory of silicon wafers in a wide variety of specifications to meet your requirements for test, monitor, and prime material. We have a large selection of diameters, type/dopants, orientations, resistivities, thicknesses and grades in stock for immediate delivery. Visit our inventory page to see a partial listing of items we have in stock.

MATERIAL CHARACTERISTICS

Diameters: 2"/50.8mm, 3"/76.2mm, 4"/100mm, 5"/125mm, 6"/150mm, 8"/200mm, 12"/300mm
Orientation: <1-0-0>, <1-1-1>, <1-1-0>, <5-1-1>, and others
Resistivities: From less than 0.004 ohm-cm to greater than 5000 ohm-cm for P-type and N-type CZ, MCZ, and FZ substrates.

Gallium-ArsenideTOP QUALITY TYPE III - V COMPOUNDS

Si-TECH, INC. offers type III - V compound wafers and ingots as well. These materials include Silicon Carbide, Gallium Arsinide, Germanium, and Indium Phoshide. All this material will be grown to customer specifications and subject to minimum order sizes.

TYPE III - V MATERIAL CHARACTERISTICS

  Diameter Growth
Method
Orientation DPNT Resistivity
Gallium Arsenide 50.8mm, 76.2mm, 100mm, 150mm CZ <1-0-0>,<1-1-1> Fe, Sn, Si, Zn .006 - .085
.09-.2 ohm-cm
Indium Phosphide 50.8mm, 76.2mm CZ <1-0-0>,<1-1-1> S, Sn, Zn .35 - .95
.1.0 - 2.8 ohm-cm
Germanium 25mm, 63.5mm, 100mm CZ <1-0-0>,<1-1-1> Si, Zn .002 - .032
.004-.062 ohm-cm
Gallium Phosphide 50.8mm, 76.2mm        
Sapphire

50.8mm, 76.2mm, 100mm

       

Wafer CassettesSILICON CARBIDE

Si-TECH also supplies Silicon Carbide.50.8mm and 100mm diameter wafers are available. Please look below for the specifications we typically have to offer.

Property4H-SiC, Single Crystal6H-SiC, Single Crystal
Lattice Parameters a=3.076 Å
c=10.053 Å
a=3.073 Å
c=15.117 Å
Stacking Sequence ABAC ABCACB

Lattice Sites

1 hexagonal (h)
1 cubic (k)

1 hexagonal (h)
2 cubic (k1, k2)
Mohs Hardness 9.2 – 9.3 9.2 – 9.3
Density 3.21 · 103 kg/m3 3.21 · 103 kg/m3
Therm. Expansion Coefficient 4 – 5 · 10-6 /K 4 – 5 · 10-6 /K
Refraction Index (at λ=467nm) no=2.719
ne=2.777
no=2.707
ne=2.755
Dielectric Constant 9.72 9.72
Thermal Conductivity 370 W/mK 490 W/mK
Bandgap 3.23 eV 3.00 eV
Break-Down Electrical Field 3 – 5 · 108 V/m 3 – 5 · 108 V/m
Saturation Drift Velocity 1.9 · 105 m/s 1.5 · 105 m/s

Wafer CassettesWAFER CASSETTES

Si-TECH now offers wafer cassettes. We have single wafer carriers ranging from 100mm up to and including 300mm available. Also, we carry 25 piece carriers from 50.8mm up to and including 300mm Si-TECH can provide you with the carrier you require to transport your wafers. Si-TECH can also reclaim certain cassettes.

See: Wafer Cassette Product Information

METAL GRANULES, PELLETS AND SLUGS.

In addition to wafers, Si-TECH can provide you with various metals in slug, pellet and granule form. These metals include but are not limited to Aluminum, Titanium, Zinc, Copper, Indium. Please contact us with your requirements.

SPIN-ON GLASS.

Spin-On Materials

Si-TECH can provide Spin-On Materials. The Spin-On Materials that Si-TECH can apply to a substrate are Lithium, Boron, Sodium, Aluminum, Phosphorous, Titanium, Copper, Zinc, Gallium, Yttrium, Palladium, Indium, Tin, Antimony, Barium, Neodymium, Tantalum, Gold and Platinum. Please contact us for more information.

Sputtering TargetsSPUTTERING TARGETS.

Si-TECH offers sputtering targets such as Chromium, Germanium, Gold, Iron, Nickel, Palladium, Platinum, Rhenium, Silicon, Silver, Aluminum-Copper, Copper-Zinc, Nickel-Aluminum, Nickel- Chromium, Silicon-Aluminum, Silicon Dioxide, Titanium-Aluminum, Titanium Dioxide, and Zinc-Oxide. Please call, fax or e-mail for price and delivery information.

 
 
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