SI-TECH - Services

Silicon Wafers Top Quality Type III-V Compounds Type III-V Material Characteristics Silicon Carbide Wafer Cassettes Sputtering Targets Metal Slugs Spin-On Glass Graphene

Products

SI-TECH, INC. offers the following products:

SILICON WAFERS

Si-TECH, INC. stocks an inventory of silicon wafers in a wide variety of specifications to meet your requirements for test, monitor, and prime material. We have a large selection of diameters, type/dopants, orientations, resistivities, thicknesses and grades in stock for immediate delivery. Visit our inventory page to see a partial listing of items we have in stock.

TOP QUALITY TYPE III - V COMPOUNDS

Si-TECH, INC. offers type III - V compound wafers and ingots as well. These materials include Silicon Carbide, Gallium Arsinide, Germanium, and Indium Phoshide. All this material will be grown to customer specifications and subject to minimum order sizes.

TYPE III - V MATERIAL CHARACTERISTICS

Gallium Arsenide	50.8mm, 76.2mm, 100mm, 150mm	CZ	<1-0-0>,<1-1-1>	Fe, Sn, Si, Zn	.006 - .085 .09-.2 ohm-cm
	Diameter	Growth Method	Orientation	DPNT	Resistivity
Indium Phosphide	50.8mm, 76.2mm	CZ	<1-0-0>,<1-1-1>	S, Sn, Zn	.35 - .95 .1.0 - 2.8 ohm-cm
Germanium	25mm, 63.5mm, 100mm	CZ	<1-0-0>,<1-1-1>	Si, Zn	.002 - .032 .004-.062 ohm-cm
Gallium Phosphide	50.8mm, 76.2mm
Sapphire	50.8mm, 76.2mm, 100mm

SILICON CARBIDE

Si-TECH also supplies Silicon Carbide.50.8mm and 100mm diameter wafers are available. Please look below for the specifications we typically have to offer.

Property	4H-SiC, Single Crystal	6H-SiC, Single Crystal
Lattice Parameters	a=3.076 Å c=10.053 Å	a=3.073 Å c=15.117 Å
Stacking Sequence	ABAC	ABCACB
Lattice Sites	1 hexagonal (h) 1 cubic (k)	1 hexagonal (h) 2 cubic (k₁, k₂)
Mohs Hardness	9.2 – 9.3	9.2 – 9.3
Density	3.21 · 10^{3 kg/m³}	3.21 · 10^{3 kg/m³}
Therm. Expansion Coefficient	4 – 5 · 10^-6 /K	4 – 5 · 10^-6 /K
Refraction Index (at λ=467nm)	n_o=2.719 n_e=2.777	n_o=2.707 n_e=2.755
Dielectric Constant	9.72	9.72
Thermal Conductivity	370 W/mK	490 W/mK
Bandgap	3.23 eV	3.00 eV
Break-Down Electrical Field	3 – 5 · 10⁸ V/m	3 – 5 · 10⁸ V/m
Saturation Drift Velocity	1.9 · 10⁵ m/s	1.5 · 10⁵ m/s
References: Landolt-Börnstein (Springer Verlag), G.L. Harris (INSPEC) and M.E. Levinshtein, S.L. Rumyantsev, M.S. Shur, Properties of advanced Semiconductor Materials, Wiley 2001

WAFER CASSETTES

Si-TECH now offers wafer cassettes. We have single wafer carriers ranging from 100mm up to and including 300mm available. Also, we carry 25 piece carriers from 50.8mm up to and including 300mm Si-TECH can provide you with the carrier you require to transport your wafers. Si-TECH can also reclaim certain cassettes.

See: Wafer Cassette Product Information

METAL GRANULES, PELLETS AND SLUGS.

In addition to wafers, Si-TECH can provide you with various metals in slug, pellet and granule form. These metals include but are not limited to Aluminum, Titanium, Zinc, Copper, Indium. Please contact us with your requirements.

SPIN-ON GLASS.

Spin-On Materials

Si-TECH can provide Spin-On Materials. The Spin-On Materials that Si-TECH can apply to a substrate are Lithium, Boron, Sodium, Aluminum, Phosphorous, Titanium, Copper, Zinc, Gallium, Yttrium, Palladium, Indium, Tin, Antimony, Barium, Neodymium, Tantalum, Gold and Platinum. Please contact us for more information.

SPUTTERING TARGETS.

Si-TECH offers sputtering targets such as Chromium, Germanium, Gold, Iron, Nickel, Palladium, Platinum, Rhenium, Silicon, Silver, Aluminum-Copper, Copper-Zinc, Nickel-Aluminum, Nickel- Chromium, Silicon-Aluminum, Silicon Dioxide, Titanium-Aluminum, Titanium Dioxide, and Zinc-Oxide. Please call, fax or e-mail for price and delivery information.